Power semiconductor devices for variable-frequency drives

Journal Article · Mon Aug 01 04:00:00 EDT 1994 · Proceedings of the IEEE (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/5.301680· OSTI ID:7187624

Baliga, B J ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States). Power Semiconductor Research Center

Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range.

• OSTI ID: 7187624
• Journal Information: Proceedings of the IEEE (Institute of Electrical and Electronics Engineers); (United States), Journal Name: Proceedings of the IEEE (Institute of Electrical and Electronics Engineers); (United States) Vol. 82:8; ISSN IEEPAD; ISSN 0018-9219
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
320303* -- Energy Conservation
Consumption
& Utilization-- Industrial & Agricultural Processes-- Equipment & Processes
EFFICIENCY
ELECTRIC MOTORS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ENERGY EFFICIENCY
ENGINES
EQUIPMENT
MOTORS
POWER CONDITIONING CIRCUITS
POWER SUPPLIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES