Si deposition from chlorosilanes; 2: Numerical analysis of thermofluid effects on deposition

Journal Article · Mon Aug 01 04:00:00 EDT 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2055064· OSTI ID:7181542

Narusawa, U ^[1]

---

1. Northeastern Univ., Boston, MA (United States). Dept. of Mechanical Engineering

Based on the effusive flux model developed in Part 1 (the preceding article), various effects of flow and thermal fields are investigated numerically for deposition from SiCl[sub 4] dilutely mixed in hydrogen passing through a rectangular reactor. Generation and transport of HCl and SiCl[sub 2] near the deposition surface is examined in detail. Thermofluid effects on deposition are presented in terms of such nondimensional parameters as the inverse Graetz number and the Rayleigh number.

• OSTI ID: 7181542
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:8; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CHLORIDES
CHLORINE COMPOUNDS
DEPOSITION
ELEMENTS
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
MASS TRANSFER
MATHEMATICAL MODELS
ORGANIC CHLORINE COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
ORGANIC SILICON COMPOUNDS
SEMIMETALS
SILANES
SILICON
SILICON CHLORIDES
SILICON COMPOUNDS
SILICON HALIDES
SURFACE COATING