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Title: Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/3.159547· OSTI ID:7181472
;  [1]; ;  [2];  [3];  [4]
  1. Stanford Univ., CA (United States). Solid-State Electronics Lab.
  2. Arizona Univ., Tucson, AZ (United States). Optical Sciences Center
  3. Sandia National Labs., Albuquerque, NM (United States)
  4. Photonic Research, Inc., Broomfield, CO (United States)

Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs--AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. In this paper the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.

OSTI ID:
7181472
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 28:10; ISSN 0018-9197
Country of Publication:
United States
Language:
English