Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells
- Stanford Univ., CA (United States). Solid-State Electronics Lab.
- Arizona Univ., Tucson, AZ (United States). Optical Sciences Center
- Sandia National Labs., Albuquerque, NM (United States)
- Photonic Research, Inc., Broomfield, CO (United States)
Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs--AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. In this paper the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.
- OSTI ID:
- 7181472
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 28:10; ISSN 0018-9197; ISSN IEJQA7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
661200 -- Techniques of General Use in Physics-- (1992-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ANGULAR DISTRIBUTION
ARSENIC COMPOUNDS
ARSENIDES
DISTRIBUTION
ELECTRIC FIELDS
ELECTRONS
ELEMENTARY PARTICLES
EXCITONS
FERMIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HOLES
JUNCTIONS
LASERS
LEPTONS
NONLINEAR OPTICS
OPTICS
PNICTIDES
QUASI PARTICLES
RESONANCE
SEMICONDUCTOR JUNCTIONS
SEPARATION PROCESSES