Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells
Journal Article
·
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
- Stanford Univ., CA (United States). Solid-State Electronics Lab.
- Arizona Univ., Tucson, AZ (United States). Optical Sciences Center
- Sandia National Labs., Albuquerque, NM (United States)
- Photonic Research, Inc., Broomfield, CO (United States)
Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs--AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal electric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. In this paper the theoretical framework used for modeling the type-II system in the presence and absence of electrons is described.
- OSTI ID:
- 7181472
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 28:10; ISSN 0018-9197
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
NONLINEAR OPTICS
GALLIUM ARSENIDES
ANGULAR DISTRIBUTION
ELECTRIC FIELDS
ELECTRONS
EXCITONS
GAIN
HETEROJUNCTIONS
HOLES
LASERS
RESONANCE
SEPARATION PROCESSES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DISTRIBUTION
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
JUNCTIONS
LEPTONS
OPTICS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
360606* - Other Materials- Physical Properties- (1992-)
661200 - Techniques of General Use in Physics- (1992-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
NONLINEAR OPTICS
GALLIUM ARSENIDES
ANGULAR DISTRIBUTION
ELECTRIC FIELDS
ELECTRONS
EXCITONS
GAIN
HETEROJUNCTIONS
HOLES
LASERS
RESONANCE
SEPARATION PROCESSES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DISTRIBUTION
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
JUNCTIONS
LEPTONS
OPTICS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
360606* - Other Materials- Physical Properties- (1992-)
661200 - Techniques of General Use in Physics- (1992-)