Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells

Journal Article · Mon Oct 05 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108443· OSTI ID:7164017

Fu, W S; Olbright, G R ^[1]; Klem, J F ^[2]; Harris, Jr, J S ^[3]

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1. Photonics Research Incorporated, 350 Interlocken Parkway, Broomfield, Colorado 80021 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. Solid State Electronics Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

We describe the femtosecond {ital optical} {ital gain} nonlinearities for the unusual case of electrons which are distributed between the direct-GaAs and indirect-AlAs layers in a GaAs/AlAs type-II multiple quantum-well (MQW) structure. Due to the spatial separation of electrons from the holes, we observe a significant increase in the gain lifetime ({gt}150 ps) in type-II MQWs, as compared to type -I MQWs ({similar to}50 ps). In addition, we investigate the effect of a longitudinal electric field on {Gamma}-{ital X} energy splitting in type-II structures. Finally, at early times we observe an ultrafast nonlinear optical response in the gain/absorption spectra which we attributed to electron-hole scattering without carrier loss.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7164017
• Journal Information: Applied Physics Letters; (United States), Vol. 61:14; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
PHOTO-INDUCED TRANSIENT SPECTROSCOPY
GALLIUM ARSENIDES
ABSORPTION SPECTRA
ELECTRON-HOLE COUPLING
GAIN
OPTICAL PROPERTIES
STARK EFFECT
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
GALLIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SPECTRA
SPECTROSCOPY
360606* - Other Materials- Physical Properties- (1992-)