Method of patterning superconducting films

Patent · Tue Aug 04 04:00:00 EDT 1992

OSTI ID:7174064

Yang, E S; Ma, Q Y

This patent describes a method for making superconducting interconnects and electrodes of a semiconductor device. It comprises: providing a substrate of silicon of first conductivity type having at least one area of opposite conductivity type silicon formed in its upper surface; forming over the substrate a thin film of a first material which when interacted with high T[sub c] superconductor material destroys the superconductivity thereof and patterning the film to expose at least a portion of the at least one area of opposite conductivity type silicon; depositing a thin film of noble metal over the pattern formed in the film of first material; patterning the metal film to leave areas of metal over at least a portion of each the at least one area of opposite conductivity type silicon; depositing over the patterned metal film a thin film of high T[sub c] superconductor material; and annealing the substrate and the films deposited thereon.

• Assignee: The Trustees of Columbia Univ., New York, NY (United States)
• Patent Number(s): US 5135908; A
• Application Number: PPN: US 7391-109
• OSTI ID: 7174064
• Country of Publication: United States
• Language: English

Related Subjects

665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COUPLING
DESIGN
ELECTRODES
ELEMENTS
FILMS
HEAT TREATMENTS
HIGH-TC SUPERCONDUCTORS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SUBSTRATES
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
THIN FILMS