Microelectronic superconducting device with multi-layer contact

Patent · Tue Oct 26 00:00:00 EDT 1993

OSTI ID:5403807

Wellstood, F C; Kingston, J J; Clarke, J

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

• DOE Contract Number: AC03-76SF00098
• Assignee: Univ. of Calif., Oakland, CA (United States)
• Patent Number(s): US 5256636; A
• Application Number: PPN: US 7-586435
• OSTI ID: 5403807
• Resource Relation: Patent File Date: 21 Sep 1990
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MICROELECTRONIC CIRCUITS
DESIGN
SUPERCONDUCTING DEVICES
FABRICATION
HIGH-TC SUPERCONDUCTORS
MASKING
STRONTIUM TITANATES
SUPERCONDUCTING FILMS
ALKALINE EARTH METAL COMPOUNDS
ELECTRONIC CIRCUITS
FILMS
OXYGEN COMPOUNDS
STRONTIUM COMPOUNDS
SUPERCONDUCTORS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
665412* - Superconducting Devices- (1992-)