Anisotropy and kinetics of the etching of tungsten in SF sub 6 multipolar microwave plasma

Journal Article · Thu Mar 01 04:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345524· OSTI ID:7171967

Durandet, A; Arnal, Y; Pelletier, J; Pomot, C ^[1]

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1. Laboratoire de Physique des Milieux Ionises, Universite Joseph Fourier, CNRS UA 844, CNET, BP 98, 38243 Meylan Cedex, France (FR)

An experimental study of the etching of tungsten with SF{sub 6} has been performed in a microwave multipolar plasma using an electron cyclotron resonance excitation with an independent low dc biasing. The anisotropy and etch rate of tungsten have been measured as a function of atomic fluorine concentration in the plasma and compared with silicon characteristics. The etching mechanisms of tungsten are analyzed in light of published data on the fluorine-tungsten interaction, and the results are explained in terms of the diffusion model for plasma etching developed for the Si-F system. Atomic fluorine adsorption on tungsten appears to be monolayerlike, whereas it is of multilayer type on silicon, and associative desorption of WF{sub 6} occurs from WF{sub 3} and/or WF{sub 4} adspecies in nearest-neighbor positions.

• OSTI ID: 7171967
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:5; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ANISOTROPY
CRYSTALS
CYCLOTRON RESONANCE
DIFFUSION
ELECTROMAGNETIC RADIATION
ELECTRON CYCLOTRON-RESONANCE
ELEMENTS
ETCHING
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
KINETICS
METALS
MICROWAVE RADIATION
PLASMA
POLYCRYSTALS
RADIATIONS
RESONANCE
SULFUR COMPOUNDS
SULFUR FLUORIDES
SURFACE FINISHING
TRANSITION ELEMENTS
TUNGSTEN