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Prebunching in a collective Raman free-electron laser amplifier

Journal Article · · Physics of Fluids B; (USA)
DOI:https://doi.org/10.1063/1.859328· OSTI ID:7169382
; ; ;  [1]
  1. Department of Physics, Research Laboratory of Electronics, and Plasma Fusion Center Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (USA)
Experiments, theory, and simulations are reported on the effects of electron prebunching in a mildly relativistic, low-current (200 kV, 1 A) free-electron laser amplifier operating in the collective (Raman) regime at a frequency of {similar to}10 GHz. Prebunching is established by injecting an electromagnetic wave into a bifilar helical wiggler and then transporting the bunched beam into a second magnetic wiggler region. The wave growth rate, {Gamma}{equivalent to}(1/{ital P})({ital dP}/{ital dz}), is deduced from measurements of the radiation intensity as a function of interaction length. Observations show that prebunching can increase the radiation growth rate {Gamma} manyfold as compared with a system without prebunching.
OSTI ID:
7169382
Journal Information:
Physics of Fluids B; (USA), Journal Name: Physics of Fluids B; (USA) Vol. 2:2; ISSN 0899-8221; ISSN PFBPE
Country of Publication:
United States
Language:
English