Effects of electron prebunching on the radiation growth rate of a collective (Raman) free-electron laser amplifier

Journal Article · Thu Sep 01 04:00:00 EDT 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.7122· OSTI ID:6546602

Leibovitch, C; Xu, K; Bekefi, G ^[1]

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1. Massachusetts Institute of Technology, Cambridge, MA 02139 (US)

Experiments are reported on the effects of electron prebunching in a mildy relativistic, low current (200 kV, 1 A) free-electron laser amplifier operating the collective (Raman)regime at a frequency of -- 10 GHz. Prebunching is established by injecting an electromagnetic wave into a bifilar helical wiggler and then transporting the bunched beam into a second magnetic wiggler region. The wave growth rate is deduced from measurements of the radiation intensity as a function of interaction length. Observations show that prebunching can increase the radiation growth rate manyfold as compared with a system without prebunching. Studies are presented both in the small signal (linear) regime, and in the nonlinear (saturated) regime.

• OSTI ID: 6546602
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:9; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFIERS
BEAM BUNCHING
BEAM DYNAMICS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTROMAGNETS
ELECTRONIC EQUIPMENT
ELECTRONS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
FREE ELECTRON LASERS
FREQUENCY RANGE
GHZ RANGE
GHZ RANGE 01-100
LASERS
LEPTONS
MAGNETS
RADIATIONS
RAMAN EFFECT
WIGGLER MAGNETS