Quantum well heterostructure lasers with low current density threshold and higher T sub 0 values
Patent
·
OSTI ID:7169156
The patent describes a quantum well heterostructure laser exhibiting low current density threshold and high T{sub 0} values. The laser comprising a plurality of contiguous semiconductor layers formed on a substrate, one or more the layers forming an active region capable of quantization of electron states, the active region confined by a pair of outer superlattice regions providing optical confinement and low thermal resistance while preventing the development of antiwaveguiding properties.properties.
- Assignee:
- Xerox Corp., Stamford, CT
- Patent Number(s):
- A; US 4882734
- Application Number:
- PPN: US 7-165862--A
- OSTI ID:
- 7169156
- Country of Publication:
- United States
- Language:
- English
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