Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions

Journal Article · Mon Aug 01 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112293· OSTI ID:7166603

Chen, Y; Liu, X; Weber, E; Bourret, E D; Liliental-Weber, Z; Haller, E E; Washburn, J ^[1]; Olego, D J; Dorman, D R; Gaines, J M; Tasker, N R ^[2]

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1. Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
2. Philips Laboratories, Briarcliff Manor, New York 10510 (United States)

The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [010] directions were observed as well as long straight 60[degree] dislocations along [110] and [1[bar 1]0] directions. In N-doped ([N][gt]1[times]10[sup 18] cm[sup [minus]3]) ZnSe epilayers, the misfit dislocations were predominantly dissociated into partial dislocations which makes cross slip and formation of irregular dislocations more difficult; only the straight dislocations along [110] and [1[bar 1]0] were observed. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along [l angle]110[r angle].

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7166603
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:5; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LINE DEFECTS
LUMINESCENCE
MICROSCOPY
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
VAPOR PHASE EPITAXY
ZINC COMPOUNDS
ZINC SELENIDES