Misfit dislocations at ErAs/GaAs heterojunctions

Journal Article · Tue Oct 31 23:00:00 EST 1995 · Acta Metallurgica et Materialia

DOI:https://doi.org/10.1016/0956-7151(95)00109-9· OSTI ID:131509

Zhu, J G ^[1]; Palmstroem, C J ^[2]; Carter, C B ^[3]

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1. Oak Ridge National Lab., TN (United States). Solid State Division
2. Bellcore, Red Bank, NJ (United States)
3. Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Chemical Engineering and Materials Science

Misfit dislocations at the ErAs/GaAs interfaces grown by molecular-beam epitaxy have been investigated using the weak-beam technique of transmission electron microscopy (TEM). The observed dislocation configurations are significantly different for those at heterojunctions between ``diamond-cubic`` structure materials. Networks of nearly orthogonal dislocation, with dislocations lying approximately along [010] and [001] dislocations and honeycomb-like dislocation networks have been observed. The dislocation density increases as the a/2<110> type dislocations, which result in complex dislocation configurations, are discussed. Slight misalignment of the epilayer with respect to the substrate is possible if there are uneven distribution of inclined Burgers vectors in different orientations or screw component in the dislocation network at the interface.

• OSTI ID: 131509
• Journal Information: Acta Metallurgica et Materialia, Journal Name: Acta Metallurgica et Materialia Journal Issue: 11 Vol. 43; ISSN 0956-7151; ISSN AMATEB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIDES
BURGERS VECTOR
COMPOSITE MATERIALS
CRYSTAL LATTICES
DISLOCATIONS
ELECTRON DIFFRACTION
ERBIUM COMPOUNDS
GALLIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY