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Title: A study of sputtering from thin films with 175-190 keV Ar sup + ions

Thesis/Dissertation ·
OSTI ID:7165102

Titanium, copper and gold thin films, of various thicknesses, on aluminum backing, have been bombarded with 175 keV and 185 keV Ar{sup +} ions, and the respective sputtering yields have been determined. The energetic ions were produced in a 400 keV Van de Graaff accelerator, and uniform ion irradiation of the samples was obtained by sweeping the ion beam across the target. The technique used to determine the effective ion dose responsible for film sputtering was based on the integration of the function representing the intensity of the ion-induced optical emission from substrate normalized twice: with respect to the beam current intensity and with respect to its own final value after the complete erosion of the film. The amount of film material removed by sputtering was determined by in-situ proton PIXE. In the thick-target limit, the values obtained for the sputter yield in all cases agree with published data and theoretical predictions. For films thinner than one full ion-range, the sputtering yield is a function of film thickness. In addition, it was possible to determine the partial sputter yield from Ti implanted in Al substrate. Also, the ion-induced K X-ray lines from Ti and Cu targets, and the M group of lines from Au have been observed. These lines, when compared with those produced by proton bombardment, are broader, have significantly smaller production cross section and their energies are shifted toward higher values. No Ar{sub +} ion-induced L X-ray lines from Au have been observed.

Research Organization:
Georgetown Univ., Washington, DC (USA)
OSTI ID:
7165102
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English