Light element redistribution and property changes in insulators due to ion bombardment and chemical processing

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:7160674

Arnold, G W

Ion-implantation into certain classes of insulating materials results in compositional changes due to loss of material from the implanted region. These changes may be accompanied by the incorporation of ambient H. Crystalline LiNbO/sub 3/ (Li-loss) and alkali-silicate glasses (alkali-loss) are materials which exhibit such changes. In both cases, radiation-enhanced diffusion has been invoked for the heavy-ion losses. The compositional changes in the implanted region of alkali-silicate glasses can bring about phase-separation and crystallization with consequent significant physical property changes. Ion-implantation of H into SiO/sub 2/ (glassy and crystalline) has proved useful in determining the number of interstitial sites in these materials and a direct confirmation of indirectly obtained free-volume fraction values.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7160674
• Report Number(s): SAND-88-0044C; CONF-8806145-1; ON: DE88011687
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALKALI METAL COMPOUNDS
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL COMPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
ELECTRICAL INSULATION
ELEMENTS
GLASS
HELIUM IONS
HYDROGEN
INTERSTITIALS
ION BEAMS
ION IMPLANTATION
IONS
LITHIUM COMPOUNDS
MINERALS
NIOBATES
NIOBIUM COMPOUNDS
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
REFRACTORY METAL COMPOUNDS
SILICA
SILICATES
SILICON COMPOUNDS
SILICON OXIDES
TRANSITION ELEMENT COMPOUNDS