Electron interactions and transport theory in n-type silicon and HCP metals
Electron interactions with impurities, phonons, and other elections are studied in a calculation of linear screening and electron mobility in n-type silicon. The dielectric function is calculated at non-zero temperatures in both the Random Phase Approximation (RPA) and the Singwi-Tosi-Land-Sjoelander (STLS) approximation. Significant differences are found at non-zero temperatures between exact solutions of the Boltzmann equation for electron-impurity scattering in the RPA Born approximation and the less accurate memory function formula for the electrical resistivity. RPA screening of impurity potentials combined with exact phase shift cross-sections yield electron mobilities in n-type silicon at 300K and 77K that agree more closely with experiment than more simple models. The electron-electron differential scattering rate in Born approximation is derived in terms of the nonequilibrium electron density-density correlation function and is evaluated in RPA to determine expressions for the inelastic electron lifetime and the Boltzmann equation collision term. The plasmon-pole contribution to the structure factor is found to be strongly damped in n-type silicon. The Fermi-surface density of states of Drudge Plasma frequency tensor are calculated for 14 metallic elements with hcp structures. By comparison with measured anisotropic resistivity components, electron-phonon coupling constants [lambda][sub tr] are extracted which compare reasonably well with [lambda] from T[sub c] for the ten superconducting elements. For Sc and Y, [lambda][sub tr] is sufficiently high (0.5-0.6) to require spin-fluctuation suppression of T[sub c]. Resistivity anisotropy is moderately well accounted for by anisotropy of the Drude plasma frequency, except for the sp elements, which have significant scattering anisotropy. A systematic onset of [open quotes]resistivity saturation[close quotes] is found when the mean free path l[le]10 [angstrom].
- Research Organization:
- State Univ. of New York, Stony Brook, NY (United States)
- OSTI ID:
- 7156337
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOLTZMANN EQUATION
COUPLING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFERENTIAL EQUATIONS
ELECTRON MOBILITY
ELECTRON-PHONON COUPLING
ELEMENTS
ENERGY LEVELS
ENERGY-LEVEL DENSITY
EQUATIONS
FERMI LEVEL
HCP LATTICES
HEXAGONAL LATTICES
MATERIALS
METALS
MOBILITY
N-TYPE CONDUCTORS
PARTIAL DIFFERENTIAL EQUATIONS
PARTICLE MOBILITY
RANDOM PHASE APPROXIMATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUPERCONDUCTORS
TEMPERATURE DEPENDENCE
TRANSPORT THEORY