Electron interactions and transport theory in n-type silicon and HCP metals

Miscellaneous · Wed Jan 01 00:00:00 EST 1992

OSTI ID:7156337

Sanborn, B A

Electron interactions with impurities, phonons, and other elections are studied in a calculation of linear screening and electron mobility in n-type silicon. The dielectric function is calculated at non-zero temperatures in both the Random Phase Approximation (RPA) and the Singwi-Tosi-Land-Sjoelander (STLS) approximation. Significant differences are found at non-zero temperatures between exact solutions of the Boltzmann equation for electron-impurity scattering in the RPA Born approximation and the less accurate memory function formula for the electrical resistivity. RPA screening of impurity potentials combined with exact phase shift cross-sections yield electron mobilities in n-type silicon at 300K and 77K that agree more closely with experiment than more simple models. The electron-electron differential scattering rate in Born approximation is derived in terms of the nonequilibrium electron density-density correlation function and is evaluated in RPA to determine expressions for the inelastic electron lifetime and the Boltzmann equation collision term. The plasmon-pole contribution to the structure factor is found to be strongly damped in n-type silicon. The Fermi-surface density of states of Drudge Plasma frequency tensor are calculated for 14 metallic elements with hcp structures. By comparison with measured anisotropic resistivity components, electron-phonon coupling constants [lambda][sub tr] are extracted which compare reasonably well with [lambda] from T[sub c] for the ten superconducting elements. For Sc and Y, [lambda][sub tr] is sufficiently high (0.5-0.6) to require spin-fluctuation suppression of T[sub c]. Resistivity anisotropy is moderately well accounted for by anisotropy of the Drude plasma frequency, except for the sp elements, which have significant scattering anisotropy. A systematic onset of [open quotes]resistivity saturation[close quotes] is found when the mean free path l[le]10 [angstrom].

• Research Organization: State Univ. of New York, Stony Brook, NY (United States)
• OSTI ID: 7156337
• Resource Relation: Other Information: Thesis (Ph.D.)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
HCP LATTICES
ELECTRON-PHONON COUPLING
FERMI LEVEL
TRANSPORT THEORY
SILICON
ELECTRON MOBILITY
BOLTZMANN EQUATION
ENERGY-LEVEL DENSITY
METALS
N-TYPE CONDUCTORS
RANDOM PHASE APPROXIMATION
SUPERCONDUCTORS
TEMPERATURE DEPENDENCE
COUPLING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFERENTIAL EQUATIONS
ELEMENTS
ENERGY LEVELS
EQUATIONS
HEXAGONAL LATTICES
MATERIALS
MOBILITY
PARTIAL DIFFERENTIAL EQUATIONS
PARTICLE MOBILITY
SEMICONDUCTOR MATERIALS
SEMIMETALS
665400* - Quantum Physics Aspects of Condensed Matter- (1992-)
360107 - Metals & Alloys- Superconducting Properties- (1992-)