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Correlations between deposition parameters and structural and electrical properties of YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films grown in situ by sequential ion beam sputtering

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103258· OSTI ID:7155608
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  1. W. M. Keck Laboratory of Engineering Materials, California Institute of Technology, Pasadena, California 91125 (US)
We have studied the correlations between deposition parameters and structural and electrical properties of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films grown {ital in} {ital situ} by sequential ion beam sputtering. Epitaxial, {ital c}-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films were grown both on (100) SrTiO{sub 3} and on (100) MgO substrates following the stacking sequence of the 123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The {ital c}-axis lattice parameters obtained were larger than the corresponding lattice parameter in bulk samples, even after low-temperature anneals in O{sub 2}. The transition temperatures were found to decrease with the enlargement of the {ital c}-axis lattice parameter. A clear correlation between growth temperature and the value of the {ital c}-axis lattice parameter was observed. The {ital c}-axis lattice parameter and the x-ray linewidth of Bragg reflections with the {bold G} vector along the {ital c}-axis were also found to be correlated. This suggests a relationship between the {ital c}-axis lattice parameter and the structural coherence of the epitaxial films.
OSTI ID:
7155608
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:24; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English