Probing the Coulomb gap in insulating n -type CdSe

Journal Article · Mon May 28 04:00:00 EDT 1990 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.64.2687· OSTI ID:7153216

Zhang, Y; Dai, P; Levy, M; Sarachik, M P ^[1]

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1. City College of the City University of New York, New York, New York 10031 (US)

We report the first observation of a crossover with decreasing temperature of the resistivity of a doped semiconductor from the exp({ital T}{sub 0}/{ital T}){sup 1/4} behavior characteristic of Mott variable-range hopping to the exp({ital T}{sub 0}{sup {prime}}/{ital T}){sup 1/2} form expected in the presence of a Coulomb gap. Simultaneous determination of {ital T}{sub 0} and {ital T}{sub 0}{sup {prime}} for several dopant concentrations yields the empirical relation {ital T}{sub 0}{sup {prime}}{proportional to}{ital T}{sub 0}{sup {ital p}}, with {ital p}{approx}2/3. If current theory is valid and applicable, this has unexpected implications regarding the critical behavior of the localization length and the dielectric constant at the metal-insulator transition.

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 7153216
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 64:22; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CHALCOGENIDES
DATA
DOPED MATERIALS
ELASTIC SCATTERING
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
INDIUM ADDITIONS
INDIUM ALLOYS
INFORMATION
MATERIALS
MOTT SCATTERING
N-TYPE CONDUCTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
QUANTITY RATIO
SCATTERING
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE