Structure of thin SnO/sub 2/-Doped In/sub 2/O/sub 3/ films

Journal Article · Thu May 01 00:00:00 EDT 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:7152093

Kolchev, B S; Chutko, V M

This paper studies the structure of SnO/sub 2/ doped In/sub 2/O/sub 3/ films obtained by the method of electron-beam evaporation. The properties and structure of SnO/sub 2/-doped In/sub 2/O/sub 3/ films deposited in an oxygen medium under a pressure of ca 10/sup -1/ Pa on a substrate at a temperature of ca 300 K are completely analogous to those of films deposited at the same substrate temperature in a vacuum. It is shown that with reactive electron-beam evaporation the main factor determining the structure of the films and, therefore, their electrical and optical properties, is the substrate temperature.

• OSTI ID: 7152093
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM OXIDES
CRYSTAL STRUCTURE
SURFACE COATING
TIN OXIDES
CRYSTAL DOPING
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
EVAPORATION
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THIN FILMS
VISIBLE SPECTRA
BEAMS
CHALCOGENIDES
DEPOSITION
FILMS
INDIUM COMPOUNDS
LEPTON BEAMS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SPECTRA
TIN COMPOUNDS
360201* - Ceramics
Cermets
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360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies
360204 - Ceramics
Cermets
& Refractories- Physical Properties