Structural properties and growth mechanism of copper and indium selenide films prepared by electrochemical selenization of metal layers
- National Physical Lab., New Delhi (India). Materials Div.
Preparation of copper and indium selenide thin films by electrochemical selenization of their respective vacuum-deposited metal layers is described. Growth of CuSe and InSe single-phase films was observed under varied selenization conditions of current density and SeSO[sup 2[minus]][sub 3] ion concentration. Structural studies show that selenide film growth takes place by nucleation. The selenization process involved in the growth of CuSe and InSe films occurs by Se[sup 2[minus]] ion generation followed by ionization of the metal which in turn reacts to form selenide film. As a result excess Se incorporation in the film is prevented leading to the growth of stoichiometric films as confirmed by compositional studies. The kinetics of selenization is affected by the cathodic potential through the control of Se[sup 2[minus]] ion diffusion and modification of the space-charge layer in the vicinity of the metal.
- OSTI ID:
- 7148653
- Journal Information:
- Journal of the Electrochemical Society; (United States), Vol. 141:6; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
COPPER SELENIDES
CRYSTAL GROWTH
INDIUM SELENIDES
COPPER SELENIDE SOLAR CELLS
FABRICATION
INDIUM SELENIDE SOLAR CELLS
PHASE STUDIES
VACUUM COATING
CHALCOGENIDES
COPPER COMPOUNDS
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
INDIUM COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SELENIDES
SELENIUM COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
140501 - Solar Energy Conversion- Photovoltaic Conversion