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Title: Structural properties and growth mechanism of copper and indium selenide films prepared by electrochemical selenization of metal layers

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2054963· OSTI ID:7148653
; ;  [1]
  1. National Physical Lab., New Delhi (India). Materials Div.

Preparation of copper and indium selenide thin films by electrochemical selenization of their respective vacuum-deposited metal layers is described. Growth of CuSe and InSe single-phase films was observed under varied selenization conditions of current density and SeSO[sup 2[minus]][sub 3] ion concentration. Structural studies show that selenide film growth takes place by nucleation. The selenization process involved in the growth of CuSe and InSe films occurs by Se[sup 2[minus]] ion generation followed by ionization of the metal which in turn reacts to form selenide film. As a result excess Se incorporation in the film is prevented leading to the growth of stoichiometric films as confirmed by compositional studies. The kinetics of selenization is affected by the cathodic potential through the control of Se[sup 2[minus]] ion diffusion and modification of the space-charge layer in the vicinity of the metal.

OSTI ID:
7148653
Journal Information:
Journal of the Electrochemical Society; (United States), Vol. 141:6; ISSN 0013-4651
Country of Publication:
United States
Language:
English