Growth and properties of CdSe thin films by a new process of electrochemical selenization of Cd metal layers

Journal Article · Tue Jun 01 00:00:00 EDT 1999 · Materials Research Bulletin

DOI:https://doi.org/10.1016/S0025-5408(99)00115-4· OSTI ID:20006002

Rastogi, A C; Balakrishnan, K S; Jain, K

Growth and properties of cadmium selenide semiconductor thin films prepared by a new electrochemical selenization process (ECS) are described. The as-formed CdSe thin films have large ({approximately}1 {micro}m) crystallites in hexagonal modification. The differential selenization kinetics in the intra- and intergrain regions causes the formation of stoichiometric CdSe film to be highly dependent on time. CdSe composition is independent of selenization parameters. Two direct optical band gaps at 2.09 and 1.44 eV, as opposed to a single gap at 1.7 eV, are observed in CdSe film selenized at 0.6 and 0.4 mA/cm{sup 2} current densities, respectively. A mechanism of selenization based on Cd ionization by oxygen reduction and reaction with cathodically released Se ions is proposed for the CdSe film formation.

• Research Organization: National Physical Lab., New Delhi (IN)
• OSTI ID: 20006002
• Journal Information: Materials Research Bulletin, Vol. 34, Issue 8; Other Information: PBD: Jun 1999; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
SYNTHESIS
CADMIUM SELENIDES
THIN FILMS
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
STOICHIOMETRY