Degradation behaviors of buried heterostructure InGaAsP/InP distributed feedback lasers grown by liquid-phase epitaxy

Journal Article · Fri Jul 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341987· OSTI ID:7147259

Fukuda, M; Suzuki, M; Motosugi, G; Ikegami, T; Yoshida, J

Some degradation modes of 1.3 and 1.55 ..mu..m buried heterostructure distributed feedback (DFB) lasers grown by liquid-phase epitaxy are clarified. A degradation mode induced by the inhomogeneous optical-field distribution along the laser cavity is found to exist in DFB lasers. In most DFB lasers, the interface degradation between first growth-step (double heterostructure) layers and second growth-step (burying) layers occurs in the same manner as Fabry--Perot lasers.

• Research Organization: NTT Optoelectronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
• OSTI ID: 7147259
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
FAILURES
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
INTERFACES
JUNCTIONS
LASER CAVITIES
LASERS
LIFETIME
LIQUID PHASE EPITAXY
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS