Method and apparatus for producing high purity silicon

Patent · Fri May 27 00:00:00 EDT 1983

OSTI ID:7147066

Olson, J M

A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

• DOE Contract Number: AC02-77CH00178
• Assignee: Dept. of Energy
• Application Number: ON: DE84011087
• OSTI ID: 7147066
• Resource Relation: Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON
PRODUCTION
PURIFICATION
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COPPER SILICIDES
HYDROCHLORIC ACID
SILANES
CHEMICAL COATING
COPPER COMPOUNDS
DEPOSITION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
INORGANIC ACIDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture