Method and apparatus for producing high purity silicon

Patent · Tue Nov 06 00:00:00 EST 1984

OSTI ID:5895416

Olson, J M

A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

• Assignee: Dept. of Energy
• Patent Number(s): US 4481232
• OSTI ID: 5895416
• Resource Relation: Patent File Date: Filed date 27 May 1983; Other Information: PAT-APPL-498999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FILAMENTS
FABRICATION
SILICON
CHEMICAL VAPOR DEPOSITION
PRODUCTION
CHEMICAL REACTIONS
CHEMICAL REACTORS
COPPER ALLOYS
COPPER SILICIDES
HEATING
PURIFICATION
SILICON ALLOYS
ALLOYS
CHEMICAL COATING
COPPER COMPOUNDS
DEPOSITION
ELEMENTS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture