Ultraviolet light-emitting diode of a cubic boron nitride pn junction made at high pressure

Journal Article · Mon Sep 12 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100082· OSTI ID:7145365

Mishima, O; Era, K; Tanaka, J; Yamaoka, S

Injection luminescence in the ultraviolet is observed from a cubic boron nitride pn junction diode made at high pressure. Microscopic observation and spectroscopic studies show that the light emission occurs near the junction region only in the forward-bias condition. The spectra extend from approx.215 nm to the red, having a few peaks mainly in the ultraviolet.

• Research Organization: National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba-shi 305, Japan
• OSTI ID: 7145365
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
BORON COMPOUNDS
BORON NITRIDES
ELECTROLUMINESCENCE
ELECTROMAGNETIC RADIATION
FABRICATION
JUNCTIONS
LIGHT EMITTING DIODES
LUMINESCENCE
NITRIDES
NITROGEN COMPOUNDS
P-N JUNCTIONS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
ULTRAVIOLET RADIATION