High temperature cubic boron nitride P-N junction diode made at high pressure

Journal Article · Fri Oct 09 04:00:00 EDT 1987 · Science (Washington, D.C.); (United States)

DOI:https://doi.org/10.1126/science.238.4824.181· OSTI ID:5247765

Mishima, O; Tanaka, J; Yamaoka, S; Fukunaga, O

A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700/sup 0/C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530/sup 0/C. 14 references, 2 figures.

• Research Organization: National Institute for Research in Inorganic Materials, Ibaraki (Japan)
• OSTI ID: 5247765
• Journal Information: Science (Washington, D.C.); (United States), Journal Name: Science (Washington, D.C.); (United States) Vol. 238; ISSN SCIEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALKALINE EARTH METALS
BERYLLIUM
BORON COMPOUNDS
BORON NITRIDES
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FABRICATION
HIGH PRESSURE
HIGH TEMPERATURE
JUNCTION DIODES
JUNCTIONS
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
P-N JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
THERMAL CONDUCTIVITY
THERMODYNAMIC PROPERTIES
USES