Superconductivity of thin tellurium films at high pressure

Journal Article · Sun Jun 01 00:00:00 EDT 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:7131496

Vlasov, V A

A study is presented of the dependence of the temperature of the superconducting transition (T /SUB c/ ) of tellurium films on their thickness and the presence of a dielectric environment consisting of silicon dioxide. The authors measured T /SUB c/ of tellurium films, evaluated at the 50% drop in the resistance, at pressures of 6 GPa, since in this pressure range T /SUB c/ of tellurium is independent of the carrier density in the range 10/sup 14/-10/sup 18/ cm/sup -3/. The experimental results are presented. The tellurium in the 150-nm thick films transformed under a pressure of 4 GPa into the Te /SUB II/ modification and had a transition temperature of T /SUB c/ = 4.2 K.

• Research Organization: Institute of High-Pressure Physics, Acad. of Sci.
• OSTI ID: 7131496
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 22:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
TELLURIUM
SUPERCONDUCTIVITY
MATERIALS TESTING
PRESSURE DEPENDENCE
SILICON OXIDES
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
THICKNESS
THIN FILMS
TRANSITION TEMPERATURE
ULTRALOW TEMPERATURE
VERY HIGH PRESSURE
CHALCOGENIDES
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS
TESTING
THERMODYNAMIC PROPERTIES
360104* - Metals & Alloys- Physical Properties