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X-ray response of silicon surface-barrier diodes at 8 and 17. 5 keV: Evidence that the x-ray sensitive depth is not generally the depletion depth

Journal Article · · Rev. Sci. Instrum.; (United States)
DOI:https://doi.org/10.1063/1.1139673· OSTI ID:7126669
The absolute x-ray response of 18 EGandG Ortec partially depleted silicon surface-barrier diodes (SBDs) has been measured at 8 and 17.5 keV. In addition we have examined the x-ray response of four Tennelec and two United Detector Technology partially depleted SBDs. The variation in response to 8 keV x rays, for which the optical depth is about 5, is comparatively slight (approx. <12%). The variation in response to 17.5-keV x rays, for which the optical depth is only approx.0.7, is comparatively large (approx.100%). These variations are mainly attributable to differences in the SBD physical thicknesses, and thus to differences in optical depth. At both 8 and 17.5 keV the diodes respond linearly to large variations in incident flux (over three orders of magnitude). This linearity, and the diode x-ray response, in general, is insensitive to large changes in the detector bias voltage; thus the depletion depth, proportional to the square root of the bias voltage, does not play a critical role in determining the x-ray sensitive depth.
Research Organization:
MIT Plasma Fusion Center, Cambridge, Massachusetts 02139
OSTI ID:
7126669
Journal Information:
Rev. Sci. Instrum.; (United States), Journal Name: Rev. Sci. Instrum.; (United States) Vol. 59:8; ISSN RSINA
Country of Publication:
United States
Language:
English