Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Active silicon x-ray for measuring electron temperature

Conference ·
OSTI ID:10176760
Silicon diodes are commonly used for x-ray measurements in the soft x-ray region between a few hundred ev and 20 keV. Recent work by Cho has shown that the charge collecting region in an underbiased silicon detector is the depletion depth plus some contribution from a region near the depleted region due to charge-diffusion. The depletion depth can be fully characterized as a function of the applied bias voltage and is roughly proportional to the squart root of the bias voltage. We propose a technique to exploit this effect to use the silicon within the detector as an actively controlled x-ray filter. With reasonable silicon manufacturing methods, a silicon diode detector can be constructed in which the sensitivity of the collected charge to the impinging photon energy spectrum can be changed dynamically in the visible to above the 20 keV range. This type of detector could be used to measure the electron temperature in, for example, a tokamak plasma by sweeping the applied bias voltage during a plasma discharge. The detector samples different parts of the energy spectrum during the bias sweep, and the data collected contains enough information to determine the electron temperature. Benefits and limitations of this technique will be discussed along with comparisons to similar methods for measuring electron temperature and other applications of an active silicon x-ray filter.
Research Organization:
General Atomics, San Diego, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC03-89ER51114
OSTI ID:
10176760
Report Number(s):
GA-A--21694; CONF-940552--26; ON: DE94017521; BR: 35AT10020/35KC07000
Country of Publication:
United States
Language:
English