Photoluminescence Investigations of InGaAsN Alloys Lattice-Matched to GaAs

Conference · Tue Jun 01 00:00:00 EDT 1999

OSTI ID:7126

Jones, E D ^[1]; Modine, N R; Allerman, A A; Fritz, I J; Kurtz, S R; Wright, A F; Tozer, S T; Wei, Xing

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1. Sandia National Laboratories

InGaAsN is a semiconductor alloy system with the property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In this paper, we have measured the conduction-band mass measurements by three different techniques for 2% nitrogen in InGaAsN lattice matched to GaAs. Additionally, we also report pressure dependent measurements of the conduction-band mass between ambient and 40 kbar. Based on our results, we suggest that the observed changes in masses are a result of {Lambda}-X mixing.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7126
• Report Number(s): SAND99-0203C
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOY SYSTEMS
ALLOYS
GALLIUM ARSENIDES
NITROGEN
PHOTOLUMINESCENCE