Combined effect of x-irradiation and forming gas anneal on the hot-carrier response of MOS oxides
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:7125300
- Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering
Process-radiation-induced defects and hot-carrier instability in n-channel transistors subjected to simulated X-ray lithography have been studied. Using optically-assisted electron injection (photoinjection), two specific instability mechanisms were investigated: (1) trapping of electrons at coulombic centers in the bulk oxide and (2) depassivation/passivation of interface traps by hydrogen originating in the bulk oxide. Devices treated with a standard forming gas anneal after X-irradiation show residual, but minor, susceptibility to hot-carrier-induced instability via both these mechanisms. These results can be explained by the presence of post-anneal neutral electron traps and the failure of the forming gas anneal to fully restore the pre-irradiation hydrogen-transport properties of the oxide.
- OSTI ID:
- 7125300
- Report Number(s):
- CONF-930704--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHARGE CARRIERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FABRICATION
HEAT TREATMENTS
IONIZING RADIATIONS
MASKING
MOS TRANSISTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHARGE CARRIERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FABRICATION
HEAT TREATMENTS
IONIZING RADIATIONS
MASKING
MOS TRANSISTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION