Growth induced anisotropy in sputtered GdCo films

Conference · Thu Jan 01 04:00:00 EST 1976 · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)

OSTI ID:7125215

Esho, S; Fujiwara, S

Substrate bias effects on growth induced anisotropy in amorphous GdCo films have been investigated. Perpendicular anisotropy is induced with negative bias voltages higher than -30 V. The induced anisotropy constant has close relations with Ar content and film density. With increasing bias voltages, both anisotropy constant and Ar content increase. Film density changes from 8.7 to 6.9 gm/cm/sup 3/ for bias voltages of zero and -170 V, respectively. The change in density may result from Ar inclusion and resultant void formation. An electric field distortion near the substrate surface gives a weak in-plane anisotropy in addition to the perpendicular anisotropy. There is a critical thickness required to induce the perpendicular anisotropy at a given bias voltage. The critical thickness decreases with increasing bias voltages. The growth induced anisotropy of bias sputter deposited GdCo films could be explained by assuming shaped void formation.

• Research Organization: Nippon Electric Co., Ltd., Kawasaki, Japan
• OSTI ID: 7125215
• Conference Information: Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 34
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
ALLOY SYSTEMS
ALLOYS
AMORPHOUS STATE
ANISOTROPY
BINARY ALLOY SYSTEMS
COBALT ALLOYS
CRYSTAL GROWTH
DENSITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FILMS
GADOLINIUM ALLOYS
INTERMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
RARE EARTH ALLOYS
SPUTTERING