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High-energy product Sm-Co-based sputtered films, crystal texturing, and magnetic properties

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.344719· OSTI ID:7123655
; ;  [1]
  1. Physics Department, Queens College of CUNY, Flushing, New York 11367 (USA)
Sm-Co-based sputtered films have been deposited that exhibit a remanence ratio for hysteresis loops measured out of the plane to in the plane of 0.04. These results have been obtained by thermalized sputtering this system in Ar, Ar+Xe mixtures, and in Xe. The use of Xe has allowed a more efficient thermalization of the massive Sm atoms so that a lower total pressure can be used than if Ar were used alone. The use of Ar-Xe mixtures as the sputtering gas has allowed high-energy product Sm{sub 2}(Co, Fe, Cu, Zr){sub 17} films with the TbCu{sub 7}-type crystal structure to be obtained over a much wider range of substrate temperatures and sputtering pressures than has been possible for films sputtered only in Ar. Films sputtered in Ar will show a perpendicular to the in-plane remanence ratio of 0.36 vs 0.04 for Xe. The slope of the hysteresis loops was nearly linear from +18 to {minus}4.5 kOe with values of {minus}0.7%/kOe for the Xe films and a value of {minus}1.2%/kOe for the Ar films. All of these films were directly crystallized onto heated substrates, which is necessary to control the crystal texturing.
OSTI ID:
7123655
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:9; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English