Assessment of silicon-on-insulator technologies for VLSI (very large scale integration)

Technical Report · Tue Dec 31 23:00:00 EST 1985

OSTI ID:7121557

Tsaur, B Y

A high-performance, cost-effective silicon-on-insulator (SOI) technology would have important near-term applications in radiation-hardened electronics and longer-term applications in submicrometer VLSI. The advantages of SOI over bulk Si technology for these applications are outlined, and CMOS, CJFET, and bipolar device structures being developed for SOI are discussed. The current status and future prospects of the two most promising SOI technologies -- beam recrystallization and high-dose oxygen implantation -- are reviewed, with emphasis on such issues critical to commercialization as material quality and manufacturing feasibility.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 7121557
• Report Number(s): AD-A-174015/8/XAB; MS-7019
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
99 GENERAL AND MISCELLANEOUS
990210 -- Supercomputers-- (1987-1989)
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FIELD EFFECT TRANSISTORS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROELECTRONICS
NONMETALS
OXYGEN
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS