Proceedings of advanced III-V compound semiconductor growth, processing and devices

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:7110505

Pearton, S J ^[1]; Sadana, D K ^[2]; Zavada, J M ^[3]

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1. AT and T Bell Laboratories, Murray Hill, NJ (US)
2. IBM Thomas J. Watson Research Center, Yorktown Heights, NY (US)
3. Research Triangle Park, NC (US)

This proceedings volume results from a Material Research Society symposium designed to cover the spectrum of activity in the III-V compound semiconductor arena. This ranges from the growth of epitaxial layers by any one of a number of different techniques, to the processing of these layers using wet and dry etching, ohmic contact or dielectric deposition, lithographic patterning, implantation, annealing or gate metal deposition, and finally to the operation of the completed device. Invited talks on many of these subjects are given first in each section, followed by contributed and poster papers.

• OSTI ID: 7110505
• Report Number(s): CONF-911202-; ISBN: 1-55899-134-4
• Resource Relation: Conference: Annual fall meeting of the Materials Research Society, Boston, MA (United States), 2-6 Dec 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ELECTRONIC CIRCUITS
FABRICATION
MEETINGS
OPERATION
INORGANIC COMPOUNDS
EPITAXY
SEMICONDUCTOR MATERIALS
ALUMINIUM ARSENIDES
ANNEALING
CARBON ADDITIONS
ETCHING
GALLIUM ARSENIDES
ION IMPLANTATION
LAYERS
LEADING ABSTRACT
P-TYPE CONDUCTORS
ABSTRACTS
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DOCUMENT TYPES
GALLIUM COMPOUNDS
HEAT TREATMENTS
MATERIALS
PNICTIDES
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)