Radial dependence of silicon KVV and L sub 23 VV Auger matrix elements
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
- Condensed Matter Theory Division 1151, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- IRC Surface Science, University of Liverpool, Liverpool L69 3BX (United Kingdom)
We present calculations which show the radial dependence of the {ital KVV} and {ital L}{sub 23}{ital VV} Auger matrix elements of silicon. We find greatly differing dependences, converging within {similar to}1 a.u. of the nucleus in the case of the {ital KVV}, but not until {similar to}4 a.u. in the case of the {ital L}{sub 23}{ital VV}, well beyond the bond midpoint of {similar to}2.2 a.u. We also find quite different dependences for the various elements within a particular {ital CVV} transition. Because the local density of states (LDOS) is dependent on the radius of the sphere of integration, our results suggest that different {ital CVV} Auger processes on the same atom in fact probe different LDOSs, as do even different contributions within the same transition. (This effect is separate from the well-known matrix element property which weights angular-momentum components differently.) These results call into question both the single-site LDOS approximation when used in the interpretation of low-energy ({lt}100 eV) Auger spectra, and the application to high-energy spectra of local densities of states obtained by integration over muffin-tin or Wigner--Seitz spheres which have a large radius compared to the region probed by the Auger process. elements
- OSTI ID:
- 7110047
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 10:4; ISSN JVTAD; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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