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Radial dependence of silicon KVV and L sub 23 VV Auger matrix elements

Conference ·
OSTI ID:5900428
 [1];  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Liverpool Univ. (United Kingdom). IRC Surface Science
We present calculations which show the radial dependence of the KVV and L{sub 23}VV Auger matrix elements of silicon. We find greatly differing dependences, converging within {approximately}1 a.u. of the nucleus in the case of the KVV, but not until {approximately}4 a.u. in the case of the L{sub 23}VV, well beyond the bond midpoint of {approximately}2.2 a.u. We also find quite different dependences for the various elements within a particular CVV transition. Because the local density of states (LDOS) is dependent on the radius of the sphere of integration, our results suggest that different CVV Auger processes on the same atom in fact probe different LDOS's, as do even different contributions within the same transition. (This effect is separate from the well-known matrix element property which weights angular-momentum components differently.) These results call into question both the single-site LDOS approximation when used in the interpretation of low-energy (< 100 eV) Auger spectra, and the application to high-energy spectra of local densities of states obtained by integration over muffin-tin or Wigner-Seitz spheres which have a large radius compared to the region probed by the Auger process.
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
DOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5900428
Report Number(s):
SAND-91-2493C; CONF-911132--10; ON: DE92004216
Country of Publication:
United States
Language:
English

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