Structure and epitaxy studies of cobalt silicide/silicon heterostructures

Miscellaneous · Tue Jan 01 00:00:00 EST 1991

OSTI ID:7109507

Zaluzec, M J

When considering transition metal silicides for use in integrated circuit technology, CoSi{sub 2} stands out as a silicide possessing an excellent combination of properties. However, the detrimental effects of CoSi{sub 2} pinhole formation seriously restricts the applicability of this silicide system. This study examines the structure/processing/property relationship of thin film cobalt silicide/silicon heterostructures grown on Si(111). The two primary objectives were: (1) identify the basic mechanisms associated with pinhole formation and cobalt silicide thin film growth; and (2) characterization of cobalt silicides grown by Si{sub a}/Co/Si{sub c} multilayer deposition and reaction and the effect this deposition technique has on the microstructure of cobalt silicide thin films. Interfacial pinhole formation was identified at the CoSi/Si interface and involves several active mechanisms. Epitaxial pinhole free CoSi{sub 2} films were grown by single-step annealing Si{sub a}/Co/Si{sub c} multilayer structures. Two step annealing Si{sub a}/Co/Si{sub c} multilayer thin films results in polycrystalline CoSi{sub 2}.

• Research Organization: Illinois Univ., Urbana, IL (United States)
• OSTI ID: 7109507
• Resource Relation: Other Information: Thesis (Ph.D.)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
COBALT SILICIDES
CRYSTAL STRUCTURE
INTEGRATED CIRCUITS
HETEROJUNCTIONS
SILICON
CRYSTAL GROWTH
EPITAXY
INTERFACES
THIN FILMS
COBALT COMPOUNDS
ELECTRONIC CIRCUITS
ELEMENTS
FILMS
JUNCTIONS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360602 - Other Materials- Structure & Phase Studies