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U.S. Department of Energy
Office of Scientific and Technical Information

Superconducting electronic-film structures. Semiannual report, 1 January-30 June 1984

Technical Report ·
OSTI ID:7109112
Solid state epitaxial growth of NbN single crystals have now been achieved on (1, -1,0,2) sapphire. Results indicate that surface preparation is the most critical factor in obtaining epitaxy. Films of V-Si and Nb-Ge have been reactively magnetron sputtered and the A15 phase has been obtained at temperatures as low as 290 C, approximately 150 C lower than with dc diode reactive sputtering. A LEED study of Nb3Ir single crystal epitaxial substrates lead to in-situ surface processing procedure and showed that surface reconstruction is caused by oxygen impurity. Epitaxial, single crystal Nb films have been prepared on sapphire and MgO substrates. A glancing angle XPS study of Al{sub 2}O{sub 3} tunnel barriers and extremely thin amorphous Mo-Ge films demonstrated universality of significant thickness variation that affects tunnelling characteristics.
Research Organization:
Westinghouse Electric Corp., Pittsburgh, PA (USA). Research and Development Center
OSTI ID:
7109112
Report Number(s):
AD-A-215477/1/XAB
Country of Publication:
United States
Language:
English