Superconducting electronic film structures. Annual report 1 January-31 December 1983

Technical Report · Wed Jan 11 04:00:00 EST 1984

OSTI ID:6506927

Braginski, A I; Gavaler, J R

Single crystal NbN films were prepared on sapphire having a (2,-1,-1,3) surface orientation. Electron diffraction and Laue data show that the NbN and sapphire orientations are related, proving epitaxial growth. A15 structure V-Si and for the first time A15 Nb-Ge films were prepared reproducibly by a reactive sputtering process. These compounds were formed at temperatures as low as 500 C with critical temperatures above 12K. Niobium films were prepared at less than 100 C with critical temperatures greater than 9K. Epitaxial quality A15 Nb-Ir single crystal substrates were prepared. A new magnetron sputtering system was implemented. Progress on the assembly and implementation of a MBE-type deposition and in situ analytical facility is reported.

• Research Organization: Westinghouse Research and Development Center, Pittsburgh, PA (USA)
• OSTI ID: 6506927
• Report Number(s): AD-A-141113/1
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ANNEALING
CHALCOGENIDES
CORUNDUM
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FILMS
GERMANIUM
HEAT TREATMENTS
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MICROSTRUCTURE
MINERALS
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SAPPHIRE
SEMIMETALS
SILICON
SPUTTERING
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
SUPERCONDUCTORS
SURFACES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
VANADIUM