Laser annealing of diffusion-induced imperfections in silicon

Journal Article · Sat Jul 01 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90164· OSTI ID:7096406

Young, R T; Narayan, J

High-temperature diffusion of boron or phosphorus into silicon leads to the formation of spherical precipitates and/or dislocation loops in the diffused layer which influence electrical junction characteristics. These diffusion-induced imperfections can be removed by high-energy pulse laser treatment. The boron or phosphorus atoms previously contained in the precipitates become electrically active and the resulting dopant concentration can exceed the solid solubility limit.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• OSTI ID: 7096406
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
BORON
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DISLOCATIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
JUNCTION DIODES
JUNCTIONS
LASER RADIATION
LINE DEFECTS
NONMETALS
P-N JUNCTIONS
PHOSPHORUS
PHYSICAL PROPERTIES
PRECIPITATION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SEPARATION PROCESSES
SILICON
SOLUBILITY