Continuous operation over 1500 h of a PbTe/PbSnTe double-heterostructure laser at 77 K
Journal Article
·
· Appl. Phys. Lett.; (United States)
Continuous operation over 1500 h at 77 K has been achieved by use of a PbTe/Pb/sub 0.93/Sn/sub 0.07/Te double-heterostructure laser which was grown using the liquid-phase-epitaxy method. The cw threshold current changed only about 3% during the first 200 h. It is concluded that the lifetime of PbTe/PbSnTe double-heterostructure lasers at 77 K is fundamentally very long.
- Research Organization:
- Fujitsu Laboratories Ltd., 1-2-28 Gosho-dori, Hyogo-ku, Kobe, Japan
- OSTI ID:
- 7091524
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
PbSnTe double-heterostructure lasers and PbEuTe double-heterostructure lasers by hot-wall epitaxy
Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K
Stimulated emission from PbTe--Pb/sub 1//sub - x/Sn/sub x/Te--PbTe double heterostructures
Journal Article
·
Tue Jan 31 23:00:00 EST 1989
· J. Appl. Phys.; (United States)
·
OSTI ID:6594607
Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K
Journal Article
·
Sat May 01 00:00:00 EDT 1976
· Appl. Phys. Lett., v. 28, no. 9, pp. 552-554
·
OSTI ID:4046613
Stimulated emission from PbTe--Pb/sub 1//sub - x/Sn/sub x/Te--PbTe double heterostructures
Journal Article
·
Mon Jan 31 23:00:00 EST 1977
· Sov. J. Quant. Electron. (Engl. Transl.); (United States)
·
OSTI ID:7305258
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ENERGY
EPITAXY
JUNCTION DIODES
LASERS
LEAD COMPOUNDS
LEAD TELLURIDES
LINE DEFECTS
OPERATION
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TELLURIDES
TELLURIUM COMPOUNDS
THRESHOLD ENERGY
TIN COMPOUNDS
TIN TELLURIDES
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ENERGY
EPITAXY
JUNCTION DIODES
LASERS
LEAD COMPOUNDS
LEAD TELLURIDES
LINE DEFECTS
OPERATION
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TELLURIDES
TELLURIUM COMPOUNDS
THRESHOLD ENERGY
TIN COMPOUNDS
TIN TELLURIDES