Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

Journal Article · Sat May 01 00:00:00 EDT 1976 · Appl. Phys. Lett., v. 28, no. 9, pp. 552-554

DOI:https://doi.org/10.1063/1.88820· OSTI ID:4046613

Walpole, J N; Calawa, A R; Harman, T C; Groves, S H

Double-heterostructure Pb/sub 1-x/Sn/sub x/Te lasers with active regions of Pb$sub 0$$.$$sub 7$$sub 82$Sn$sub 0$$.$$sub 21$$sub 8$Te have been grown by molecular-beam epitaxy which operate cw up to heat-sink temperatures of 114$sup 0$K. Temperature tuning of the emission from 15.9 to 8.54 $mu$m wavelength is obtained, with emission at 77$sup 0$K near 11.5 $mu$m. The current-voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency. (AIP)

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-028968
• OSTI ID: 4046613
• Journal Information: Appl. Phys. Lett., v. 28, no. 9, pp. 552-554, Journal Name: Appl. Phys. Lett., v. 28, no. 9, pp. 552-554; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

*SEMICONDUCTOR LASERS-- FABRICATION
420300* --Engineering--Lasers
CRYSTAL GROWTH
EFFICIENCY
EPITAXY
FREQUENCY SELECTION
INFRARED RADIATION
LEAD TELLURIDES
MOLECULAR BEAMS
N42210* --Engineering--Facilities & Equipment--Lasers
OPERATION
SEMICONDUCTOR DIODES
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
TIN TELLURIDES