Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasers

Journal Article · Fri Nov 30 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.62010· OSTI ID:5883565

Feit, Z; Kostyk, D; Woods, R J; Mak, P ^[1]

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1. Laser Photonics Analytics Div., Bedford, MA (US)

This paper reports on buried heterostructure (BH) PbSnTe-PbEuSeTe lasers with a PbSnTe active layer fabricated for the first time using a two stage molecular beam epitaxy (MBE) growth procedure. Lasers with 4 {mu}m wide and 0.65 {mu}m thick buried Pb{sub 0.961}Sn{sub 0.039}Te active layer and Pb{sub 0.985}Eu{sub 0.015}Se{sub 0.02}Te{sub 0.98} cladding layers were grown. Continuous wave (CW) operating temperature of 175 K was measured with cw threshold currents of 1.6 mA (20 K), 13.6 mA (80 K), and 195 mA (160 K). Single mode operation with 3.0 cm{sup {minus}1} mode tuning was measured at 1639.8 cm{sup {minus}1} emission.

• OSTI ID: 5883565
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:12; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CHALCOGENIDES
DIMENSIONS
ENERGY
EPITAXY
EUROPIUM COMPOUNDS
FABRICATION
HETEROJUNCTIONS
JUNCTIONS
LASERS
LAYERS
LEAD COMPOUNDS
LEAD TELLURIDES
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
OPERATION
RARE EARTH COMPOUNDS
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TELLURIDES
TELLURIUM COMPOUNDS
THICKNESS
THRESHOLD ENERGY
TIN COMPOUNDS
TIN TELLURIDES
TUNING