Photoemission study of Au, Ge, and O[sub 2] deposition on NH[sub 4]F etched Si(111)

Journal Article · Fri Jul 01 00:00:00 EDT 1994 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.579020· OSTI ID:7085240

Terry, J; Cao, R; Wigren, C; Pianetta, P ^[1]

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1. Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Stanford, California 94309 (United States)

We have studied the interaction of a metal Au, a semiconductor Ge, and a nonmetal O[sub 2], with the NH[sub 4]F etched Si(111) surface with photoemission spectroscopy. Two components were present in Si 2[ital p] core-level spectra from the H-terminated surface. We observed the flatband condition from the as-etched, [ital n]-type, Si(111) surface. We performed stepwise depositions of Au and measured the band bending with photoemission spectroscopy. The Fermi level pinned near midgap as Au was deposited onto the as-etched surface. After the deposition of 1 ML of Au, a Au-silicide layer formed. This interfacial component indicated that the passivating H layer was compromised. As the Au coverage was increased, layers of pure Au formed between the bulk silicon and the Au-silicide layer. The observed behavior was nearly identical to that of Au deposition on the Si(111) 7[times]7 surface [Phys. Rev. Lett. [bold 67], 2187 (1991)]. Next, we tested the ability of the monohydride layer to sustain surfactant assisted growth of Ge. Ge islanding was observed at 400 [degree]C indicating that good surfactant growth was not obtained. This was consistent with the recent results of Sakai and Tatsumi [Appl. Phys. Lett. [bold 61], 52 (1994)] who reported that the surface roughness was nearly the same for surfaces grown with or without H at this temperature. Although the monohydride layer was not a good surfactant for the Si(111) surface at this temperature, further study at different temperatures is needed to determine the ability of the ideal monohydride layer to act as a surfactant. Finally, we observed no oxidation of the as-etched surface at room temperature upon exposure to molecular oxygen.

• OSTI ID: 7085240
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Vol. 12:4; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
PHYSICAL VAPOR DEPOSITION
GOLD
OXYGEN
ADSORPTION
SILICON
INTERFACES
AMBIENT TEMPERATURE
ANNEALING
PHOTOEMISSION
TEMPERATURE RANGE 0400-1000 K
DEPOSITION
ELEMENTS
EMISSION
HEAT TREATMENTS
METALS
NONMETALS
SECONDARY EMISSION
SEMIMETALS
SORPTION
SURFACE COATING
TEMPERATURE RANGE
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies