Photoemission study of Au, Ge, and O[sub 2] deposition on NH[sub 4]F etched Si(111)
- Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Stanford, California 94309 (United States)
We have studied the interaction of a metal Au, a semiconductor Ge, and a nonmetal O[sub 2], with the NH[sub 4]F etched Si(111) surface with photoemission spectroscopy. Two components were present in Si 2[ital p] core-level spectra from the H-terminated surface. We observed the flatband condition from the as-etched, [ital n]-type, Si(111) surface. We performed stepwise depositions of Au and measured the band bending with photoemission spectroscopy. The Fermi level pinned near midgap as Au was deposited onto the as-etched surface. After the deposition of 1 ML of Au, a Au-silicide layer formed. This interfacial component indicated that the passivating H layer was compromised. As the Au coverage was increased, layers of pure Au formed between the bulk silicon and the Au-silicide layer. The observed behavior was nearly identical to that of Au deposition on the Si(111) 7[times]7 surface [Phys. Rev. Lett. [bold 67], 2187 (1991)]. Next, we tested the ability of the monohydride layer to sustain surfactant assisted growth of Ge. Ge islanding was observed at 400 [degree]C indicating that good surfactant growth was not obtained. This was consistent with the recent results of Sakai and Tatsumi [Appl. Phys. Lett. [bold 61], 52 (1994)] who reported that the surface roughness was nearly the same for surfaces grown with or without H at this temperature. Although the monohydride layer was not a good surfactant for the Si(111) surface at this temperature, further study at different temperatures is needed to determine the ability of the ideal monohydride layer to act as a surfactant. Finally, we observed no oxidation of the as-etched surface at room temperature upon exposure to molecular oxygen.
- OSTI ID:
- 7085240
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 12:4; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ADSORPTION
AMBIENT TEMPERATURE
ANNEALING
DEPOSITION
ELEMENTS
EMISSION
GERMANIUM
GOLD
HEAT TREATMENTS
INTERFACES
METALS
NONMETALS
OXYGEN
PHOTOEMISSION
PHYSICAL VAPOR DEPOSITION
SECONDARY EMISSION
SEMIMETALS
SILICON
SORPTION
SURFACE COATING
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSITION ELEMENTS