Gas pressure sintering of silicon nitride to optimize fracture toughness

Conference · Thu Jun 01 04:00:00 EDT 1995

OSTI ID:70825

Tiegs, T N; Nunn, S D; Beavers, T M; Menchhofer, P A; Barker, D L; Coffey, D W

Gas-pressure sintering (GPS) can be used to densify silicon nitride containing a wide variety of sintering additives. Parameters affecting the sintering behavior include densification temperature, densification time, grain growth temperature, grain growth time and heating rates. The Si{sub 3}N{sub 4}-6% Y{sub 2}O{sub 3}-2% A1{sub 2}O{sub 3} samples sintered to high densities at all conditions used in the present study, whereas the Si{sub 3}N{sub 4}-Sr{sub 2}La{sub 4}Yb{sub 4}(SiO{sub 4}){sub 6}O{sub 2} samples required the highest temperatures and longest times to achieve densities {ge}98 % T. D. The main effect on the fracture toughness for Si{sub 3}N{sub 4}-6% Y{sub 2}O{sub 3}-2% A1{sub 2}O{sub 3} samples was the use of a lower densification temperature, which was 1900C in the present study. For the Si{sub 3}N{sub 4}-Sr{sub 2}La{sub 4}Yb{sub 4}SiO4{sub 4}){sub 6}O{sub 2} composition, fracture toughness was sensitive to and improved by a slower heating rate (10c/min), a lower densification temperature (1900`), a higher grain growth temperature (2000C), and a longer grain growth time (2 h).

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 70825
• Report Number(s): CONF-950129--8; ON: DE95012899
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADDITIVES
FLEXURAL STRENGTH
FRACTURE PROPERTIES
GRAIN GROWTH
MECHANICAL PROPERTIES
SILICON NITRIDES
SINTERING