High voltage MOSFET switching circuit

Patent · Tue Jul 26 00:00:00 EDT 1994

OSTI ID:7082462

McEwan, T E

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5332938; A
• Application Number: PPN: US 7-863914
• OSTI ID: 7082462
• Resource Relation: Patent File Date: 6 Apr 1992
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SWITCHING CIRCUITS
DESIGN
INDUCTANCE
MOSFET
PULSE SHAPERS
SEMICONDUCTOR SWITCHES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
EQUIPMENT
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
PHYSICAL PROPERTIES
PULSE CIRCUITS
SEMICONDUCTOR DEVICES
SIGNAL CONDITIONERS
SWITCHES
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)