Physical modeling of transient diffusion effects in silicon due to surface oxidation and ion implantation

Thesis/Dissertation · Tue Jan 01 04:00:00 EST 1991

OSTI ID:7080692

Packan, P A

In order to minimize dopant redistribution in submicron silicon devices, extremely short thermal cycles are being used. As these thermal cycles continue to decrease, anomalous diffusion effects play an increasingly larger role in determining dopant diffusion behavior. Both surface oxidation and ion implantation produce these anomalous dopant diffusion effects. Through a series of experiments, the effects of these two processes are analyzed and modeled within the framework of the SUPREM IV process simulation program. Experiments have shown that surface oxidation leads to an increase in the interstitial concentration. This leads to an enhanced diffusion for dopants that diffuse primarily through an interstitial mechanism and a retardation for dopants that diffuse primarily through a vacancy mechanism. Through the use of {sup 29}Si implants, the effects of implantation dose, implantation energy, anneal temperature, and anneal time are analyzed. {sup 29}Si doses ranging from 1 {times} 10{sup 12} to 2 {times} 10{sup 14} and energies ranging from 10 to 200 keV were used to analyze the damage effects on dopant diffusion as a function of time for 700-1,000 C anneals.

• Research Organization: Stanford Univ., CA (United States)
• OSTI ID: 7080692
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360604 -- Materials-- Corrosion
Erosion
& Degradation
360605 -- Materials-- Radiation Effects
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DOPED MATERIALS
ELEMENTS
ENERGY RANGE
EVEN-ODD NUCLEI
INTERSTITIALS
ION IMPLANTATION
ISOTOPES
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LIGHT NUCLEI
MATERIALS
NUCLEI
OXIDATION
PERMEABILITY
POINT DEFECTS
SEMIMETALS
SILICON
SILICON 29
SILICON ISOTOPES
STABLE ISOTOPES
SURFACES