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Grain growth of rapid-thermal-annealed Y-Ba-Cu oxide superconducting thin films

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100612· OSTI ID:7078728

A study of the microstructure of Cu-rich and stoichiometric Y-Ba-Cu oxide thin-film superconductors is presented. The films were deposited on <100> SrTiO/sub 3/ by the nonvacuum technique of metalorganic deposition followed by rapid thermal annealing in oxygen. Analysis showed that for annealing temperatures below 900 /sup 0/C, grain size increased with increased annealing temperature, with an enhancement in grain growth for the Cu-rich films. Annealing near or above the melting point of the 1-2-3 phase causes only a slight increase in the rate of grain growth and no detectable effects of the excess Cu. Annealing above 920 /sup 0/C produces segregated CuO islands 5--10 ..mu..m in size in the Cu-rich films. Oriented grain growth was found for the 1-2-3 grains with their c axis perpendicular and parallel to the SrTiO/sub 3/ substrates. Sheet resistivity measurements were correlated with grain size, phase separation, and oriented grain growth. An anomalous behavior in the resistance-temperature plot at 220--240 K of the Cu-rich films is shown to be related to the presence of the excess Cu.

Research Organization:
Electrical and Electronics Engineering Department, General Motors Research Laboratories, Warren, Michigan 48090-9055
OSTI ID:
7078728
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:5; ISSN APPLA
Country of Publication:
United States
Language:
English