Advanced dielectrics for passivation of InSb

Conference · Wed Jan 01 04:00:00 EST 1992

OSTI ID:7076482

Barbour, J C; Casalnuovo, S A; Kurtz, S R

A combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiO[sub x]N[sub y] on InSb at temperatures from 30[degrees]C to 250[degrees]C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (CV) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si[sub 3]ON[sub 2] on InSb, and sulfided layers capped with S[sub 3]ON[sub 2] all exhibited good C-V properties consistent with interface state densities on the order of 10[sup 11]/cm[sup 2]-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si[sub 3]N[sub 4] on InSb and the adhesion of Si[sub 3]ON[sub 2] on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7076482
• Report Number(s): SAND-92-1593C; CONF-921101--47; ON: DE93005353
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360604* -- Materials-- Corrosion
Erosion
& Degradation
ANTIMONIDES
ANTIMONY COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH
CYCLOTRON RESONANCE
DIELECTRIC MATERIALS
ELECTRON CYCLOTRON-RESONANCE
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
PNICTIDES
RESONANCE
SILICON COMPOUNDS
SILICON OXIDES