Electrical properties of polycrystalline silicon-SiO/sub 2/-InSb structures

Journal Article · Mon Dec 01 04:00:00 EST 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5762397

Padalko, A G; Lazarev, V B; Volkov, V V; Mironenko, A I; Kotov, B A; Sukharev, V I

By Hall-effect- and volt-farad-methods the basic electrical parameters of thin, single-crystal InSb layers on sapphire, grown by directional crystallization of the melt, as well as the electrophysical properties of semiconductor-dielectric interfaces in the MOS structures Si*-SiO/sub 2/-InSb and Si*-SiO/sub 2/-Dy/sub 2/O/sub 3/-InSb, where Si* is strongly doped, polycrystalline silicon, were determined. It is shown that in these structures the dielectrics have high break-down voltages, whereas on characteristic interfaces the above structures do not yield similar structures with anodic oxides.

• Research Organization: N.S. Kurnakov Institute of General and Inorganic Chemistry, USSR
• OSTI ID: 5762397
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:7; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
360104* -- Metals & Alloys-- Physical Properties
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
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ALLOYS
ANTIMONY ALLOYS
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
CRYSTAL DOPING
CRYSTALLIZATION
CRYSTALS
DYSPROSIUM
DYSPROSIUM COMPOUNDS
DYSPROSIUM OXIDES
ELECTRICAL PROPERTIES
ELEMENTS
HALL EFFECT
INDIUM ALLOYS
INTERMETALLIC COMPOUNDS
METALLURGICAL EFFECTS
METALS
MOBILITY
MONOCRYSTALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
RARE EARTH COMPOUNDS
RARE EARTHS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES